Improved measurement of the K+->pi+nu(nu)over-bar branching ratio

An additional event near the upper kinematic limit for K+-->pi(+)nu(nu) over bar has been observed by experiment E949 at Brookhaven National Laboratory. Combining previously reported and new data, the branching ratio is B(K+-->pi(+)nu(nu) over bar)=(1.47(-0.89)(+1.30))x10(-10) based on three events observed in the pion momentum region 211<P<229 MeV/c. At the measured central value of the branching ratio, the additional event had a signal-to-background ratio of 0.9

Measurement of local optomechanical properties of a direct bandgap 2D semiconductor

Strain engineering is a powerful tool for tuning physical properties of 2D materials, including monolayer transition metal dichalcogenides (TMDs)—direct bandgap semiconductors with strong excitonic response. Deformation of TMD monolayers allows inducing modulation of exciton potential and, ultimately, creating single-photon emitters at desired positions. The performance of such systems is critically dependent on the exciton energy profile and maximum possible exciton energy shift that can be achieved under local impact until the monolayer rupture. Here, we study the evolution of two-dimensional exciton energy profile induced in a MoSe2 monolayer under incremental local indentation until the rupture. We controllably stress the flake with an atomic force microscope tip and perform in situ spatiospectral mapping of the excitonic photoluminescence in the vicinity of the indentation point. In order to accurately fit the experimental data, we combine numerical simulations with a simple model of strain-induced modification of the local excitonic response and carefully account for the optical resolution of the setup. This allows us to extract deformation, strain, and exciton energy profiles obtained at each indentation depth. The maximum exciton energy shift induced by local deformation achieved at 300 nm indentation reaches the value of 36.5 meV and corresponds to 1.15% strain of the monolayer. Our approach is a powerful tool for in situ characterization of local optomechanical properties of 2D direct bandgap semiconductors with strong excitonic response

New Measurement of the K+->pi(+)nu nu Branching Ratio

Three events for the decay K+->pi(+)nu have been observed in the pion momentum region below the K+->pi(+)pi(0) peak, 140 pi(+)nu nu)=(1.73(-1.05)(+1.15))x10(-10) consistent with the standard model prediction

Physical aspects of divertor Thomson scattering implementation on ITER

This paper describes the challenges of Thomson Scattering implementation in the ITER divertor and evaluates the capability to satisfy project requirements related to the range of the measured electron temperature and density. A number of aspects of data interpretation are also discussed. Although this assessment and the proposed solutions are considered in terms of ITER compatibility, they may also be of some use in currently operating magnetic confinement devices